BSC014N04LSIATMA1 by Infineon Technologies

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BSC014N04LSIATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSC014N04LSIATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 96 W; Maximum Drain-Source On Resistance: .002 ohm; Moisture Sensitivity Level (MSL): 1;
Datasheet

Datasheet

58 In Stock

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BSC014N04LSIATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	166 A
Maximum Pulsed Drain Current (IDM):	780 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	96 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.002 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	90 mJ
Other Names:	BSC014N04LSIATMA1CT BSC014N04LSIATMA1DKR SP000953212 BSC014N04LSIATMA1TR
Maximum Feedback Capacitance (Crss):	180 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V

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