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BSC014N04LSIATMA1
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberBSC014N04LSIATMA1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 96 W; Maximum Drain-Source On Resistance: .002 ohm; Moisture Sensitivity Level (MSL): 1;
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Datasheet
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DetailsBSC014N04LSIATMA1 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 166 A |
| Maximum Pulsed Drain Current (IDM): | 780 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 96 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .002 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 90 mJ |
| Other Names: | BSC014N04LSIATMA1CT BSC014N04LSIATMA1DKR SP000953212 BSC014N04LSIATMA1TR |
| Maximum Feedback Capacitance (Crss): | 180 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 40 V |
