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IRF7319TRPBF

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IRF7319TRPBF
Description

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
Datasheet

Datasheet

515 In Stock

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IRF7319TRPBF Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	82 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
JEDEC-95 Code:	MS-012AA
Maximum Pulsed Drain Current (IDM):	30 A
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Maximum Drain-Source On Resistance:	.029 ohm
Moisture Sensitivity Level (MSL):	1

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