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IXTA96P085T
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ManufacturerLittelfuse
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Manufacturer's Part NumberIXTA96P085T
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
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Datasheet
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DetailsIXTA96P085T Technical Details
TYPE | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 10 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 96 A |
Maximum Pulsed Drain Current (IDM): | 300 A |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 298 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .013 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 1000 mJ |
Maximum Feedback Capacitance (Crss): | 460 pF |
JEDEC-95 Code: | TO-263AA |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 85 V |
Additional Features: | AVALANCHE RATED |
Peak Reflow Temperature (C): | 260 |