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JANTX2N6796U

Manufacturer

Infineon Technologies
Manufacturer's Part Number

JANTX2N6796U
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Package Style (Meter): CHIP CARRIER; Minimum DS Breakdown Voltage: 100 V;
Datasheet

Datasheet

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JANTX2N6796U Technical Details

TYPE	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8 A
Maximum Pulsed Drain Current (IDM):	32 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	15
Maximum Power Dissipation (Abs):	25 W
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-CQCC-N15
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Maximum Drain-Source On Resistance:	.207 ohm
Avalanche Energy Rating (EAS):	134 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	100 V
Qualification:	Qualified
Additional Features:	HIGH RELIABILITY
Reference Standard:	MIL-19500/557
Maximum Drain Current (Abs) (ID):	8 A

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