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Bulk
| QTY | Unit Price | Ext Price |
| 350 | $1.995 | $698.250 |
IPT020N10N3ATMA1
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberIPT020N10N3ATMA1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;
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Datasheet
350 In Stock
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DetailsIPT020N10N3ATMA1 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 300 A |
| Maximum Pulsed Drain Current (IDM): | 1200 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 375 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .02 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 800 mJ |
| Other Names: | IPT020N10N3ATMA1CT IPT020N10N3 IPT020N10N3ATMA1TR -IPT020N10N3ATMA1 SP001100160 IPT020N10N3ATMA1DKR |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Additional Features: | ULTRA LOW RESISTANCE |
| Maximum Drain Current (Abs) (ID): | 300 A |
| Peak Reflow Temperature (C): | 260 |
