IPT020N10N3ATMA1 by Infineon Technologies

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350	$1.995	$698.250

IPT020N10N3ATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IPT020N10N3ATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;
Datasheet

Datasheet

350 In Stock

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IPT020N10N3ATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	300 A
Maximum Pulsed Drain Current (IDM):	1200 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	375 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.02 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	800 mJ
Other Names:	IPT020N10N3ATMA1CT IPT020N10N3 IPT020N10N3ATMA1TR -IPT020N10N3ATMA1 SP001100160 IPT020N10N3ATMA1DKR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Additional Features:	ULTRA LOW RESISTANCE
Maximum Drain Current (Abs) (ID):	300 A
Peak Reflow Temperature (C):	260

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