SQM120P10-10M1L_GE3 by Vishay Intertechnology

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SQM120P10-10M1L_GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SQM120P10-10M1L_GE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain Current (ID): 120 A; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

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SQM120P10-10M1L_GE3 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	304 mJ
Other Names:	SQM120P10_10M1LGE3-ND SQM120P10 10M1LGE3 SQM120P10_10M1LGE3TR SQM120P10_10M1LGE3DKR SQM120P10_10M1LGE3CT
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	120 A
JEDEC-95 Code:	TO-263AB
Maximum Pulsed Drain Current (IDM):	480 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.0101 ohm

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