SPW47N60C3FKSA1 by Infineon Technologies

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SPW47N60C3FKSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

SPW47N60C3FKSA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 415 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PSFM-T3;
Datasheet

Datasheet

925 In Stock

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SPW47N60C3FKSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	47 A
Maximum Pulsed Drain Current (IDM):	141 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	415 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.07 ohm
Avalanche Energy Rating (EAS):	1800 mJ
Other Names:	SPW47N60C3 SPW47N60C3XK 2156-SPW47N60C3FKSA1 448-SPW47N60C3FKSA1 SPW47N60C3X SPW47N60C3IN-ND SPW47N60C3XTIN SP000013953 SPW47N60C3IN SPW47N60C3IN-NDR SPW47N60C3XTIN-ND SPW47N60C3FKSA1-ND
JEDEC-95 Code:	TO-247AC
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	47 A

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