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ZVN2110GTA

Manufacturer

Zetex Plc
Manufacturer's Part Number

ZVN2110GTA
Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn); Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet

Datasheet

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ZVN2110GTA Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	15 ns
Maximum Drain Current (ID):	.5 A
Maximum Pulsed Drain Current (IDM):	6 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	4
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	26 ns
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	4 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	ZVN2110GCT ZVN2110GDKRINACTIVE ZVN2110G ZVN2110GTR-NDR ZVN2110GCT-NDR ZVN2110GTR ZVN2110GDKR-ND Q1206752 ZVN2110GDKR
Maximum Feedback Capacitance (Crss):	8 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Additional Features:	FAST SWITCHING
Peak Reflow Temperature (C):	260

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