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PMV100EPAR

Manufacturer

Nexperia
Manufacturer's Part Number

PMV100EPAR
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; No. of Elements: 1; JESD-609 Code: e3;
Datasheet

Datasheet

Not In Stock

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PMV100EPAR Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2.2 A
Maximum Pulsed Drain Current (IDM):	9 A
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	8.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.13 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	33 mJ
Maximum Feedback Capacitance (Crss):	26 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	AEC-Q101; IEC-60134

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