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IRFH4251DTRPBF

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IRFH4251DTRPBF
Description

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 120 A;
Datasheet

Datasheet

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IRFH4251DTRPBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	45 A
Maximum Pulsed Drain Current (IDM):	120 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	63 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Maximum Drain-Source On Resistance:	.0046 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	61 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	25 V
Maximum Drain Current (Abs) (ID):	188 A

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