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SI7315DN-T1-GE3
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ManufacturerVishay Intertechnology
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Manufacturer's Part NumberSI7315DN-T1-GE3
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; No. of Terminals: 5; Peak Reflow Temperature (C): 260;
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Datasheet
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DetailsSI7315DN-T1-GE3 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 8.9 A |
| Maximum Pulsed Drain Current (IDM): | 10 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 5 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-C5 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | C BEND |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .315 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 9.8 mJ |
| Other Names: | SI7315DN-T1-GE3CT SI7315DN-T1-GE3TR SI7315DN-T1-GE3DKR |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 150 V |
| Peak Reflow Temperature (C): | 260 |
