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AUIRF5210STRL

Manufacturer

Infineon Technologies
Manufacturer's Part Number

AUIRF5210STRL
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; JEDEC-95 Code: TO-263AB; Package Shape: RECTANGULAR;
Datasheet

Datasheet

303 In Stock

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AUIRF5210STRL Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	38 A
Maximum Pulsed Drain Current (IDM):	140 A
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	170 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.06 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	120 mJ
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	100 V
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	38 A

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