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FDB3632_F085
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ManufacturerFairchild Semiconductor
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Manufacturer's Part NumberFDB3632_F085
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 310 W; Avalanche Energy Rating (EAS): 338 mJ; Minimum DS Breakdown Voltage: 100 V;
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Datasheet
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DetailsFDB3632_F085 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 12 A |
| Sub-Category: | FET General Purpose Powers |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 310 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .009 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 338 mJ |
| Other Names: | FDB3632_F085DKR FDB3632_F085TR-ND FDB3632_F085TR FDB3632_F085DKR-ND FDB3632-F085TR FDB3632_F085CT FDB3632-F085CT FDB3632_F085CT-ND FDB3632-F085DKR FDB3632_F085 2832-FDB3632-F085TR |
| JEDEC-95 Code: | TO-263AB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 100 V |
| Reference Standard: | AEC-Q101 |
| Maximum Drain Current (Abs) (ID): | 12 A |
| Peak Reflow Temperature (C): | 260 |
