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2N2222A
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ManufacturerRaytheon Semiconductor
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Manufacturer's Part Number2N2222A
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DescriptionNPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;
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Datasheet
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Details2N2222A Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 250 MHz |
| Package Body Material: | METAL |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 35 ns |
| JEDEC-95 Code: | TO-18 |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 100 |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| JESD-609 Code: | e0 |
| No. of Terminals: | 3 |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| Maximum Turn Off Time (toff): | 285 ns |
| JESD-30 Code: | O-MBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Maximum Collector-Base Capacitance: | 8 pF |
| Maximum VCEsat: | 1 V |