FQP47P06 by Fairchild Semiconductor

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FQP47P06

  • Manufacturer
    Fairchild Semiconductor
  • Manufacturer's Part Number
    FQP47P06
  • Description
    P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; JESD-30 Code: R-PSFM-T3; Maximum Pulsed Drain Current (IDM): 188 A;
  • Datasheet

Not In Stock

Please provide a valid Quantity between 1 and 1000,000,000.
Please provide a valid Email Address.

Popular Products

FQP47P06 Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 47 A
Maximum Pulsed Drain Current (IDM): 188 A
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 160 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .026 ohm
Avalanche Energy Rating (EAS): 820 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 47 A

Category Top Products