IPT059N15N3ATMA1 by Infineon Technologies

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IPT059N15N3ATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IPT059N15N3ATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE;
Datasheet

Datasheet

603 In Stock

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IPT059N15N3ATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	155 A
Maximum Pulsed Drain Current (IDM):	620 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	375 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0059 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	520 mJ
Other Names:	SP001100162 2156-IPT059N15N3ATMA1 IPT059N15N3ATMA1DKR IPT059N15N3ATMA1CT IPT059N15N3 IPT059N15N3ATMA1TR -IPT059N15N3ATMA1 IFEINFIPT059N15N3ATMA1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	150 V

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