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PSMN040-100MSEX

Manufacturer

Nexperia
Manufacturer's Part Number

PSMN040-100MSEX
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Avalanche Energy Rating (EAS): 54 mJ; Transistor Application: SWITCHING;
Datasheet

Datasheet

1899 In Stock

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PSMN040-100MSEX Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	121 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0366 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	54 mJ
Other Names:	568-10232-6-ND 1727-1086-1 1727-1086-2 PSMN040-100MSE,115 1727-1086-6 PSMN040-100MSE+115 934067473115 568-10232-6 568-10232-1 568-10232-2 568-10232-1-ND 5202-PSMN040-100MSEXTR 568-10232-2-ND
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	100 V
Reference Standard:	IEC-60134
Peak Reflow Temperature (C):	260

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