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BSC320N20NS3GATMA1
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberBSC320N20NS3GATMA1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 190 mJ; No. of Terminals: 8; Maximum Operating Temperature: 150 Cel;
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Datasheet
228 In Stock
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DetailsBSC320N20NS3GATMA1 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 36 A |
| Maximum Pulsed Drain Current (IDM): | 144 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .032 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 190 mJ |
| Other Names: | BSC320N20NS3 GDKR BSC320N20NS3 G-ND SP000676410 BSC320N20NS3GATMA1CT BSC320N20NS3 GDKR-ND BSC320N20NS3 GCT-ND BSC320N20NS3 GCT BSC320N20NS3GATMA1TR BSC320N20NS3 GTR-ND BSC320N20NS3G BSC320N20NS3 GTR BSC320N20NS3 G BSC320N20NS3GATMA1DKR |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 200 V |
| Qualification: | Not Qualified |
