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G2R1000MT17J

Manufacturer

Genesic Semiconductor
Manufacturer's Part Number

G2R1000MT17J
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G7;
Datasheet

Datasheet

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G2R1000MT17J Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5 A
Maximum Pulsed Drain Current (IDM):	8 A
Surface Mount:	YES
No. of Terminals:	7
Maximum Power Dissipation (Abs):	44 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G7
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	1.25 ohm
Avalanche Energy Rating (EAS):	45 mJ
Other Names:	1242-G2R1000MT17J
Maximum Feedback Capacitance (Crss):	5 pF
JEDEC-95 Code:	TO-263
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	1700 V
Reference Standard:	IEC-60747-8-4

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