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G2R1000MT17J
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ManufacturerGenesic Semiconductor
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Manufacturer's Part NumberG2R1000MT17J
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G7;
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Datasheet
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DetailsG2R1000MT17J Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON CARBIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 5 A |
| Maximum Pulsed Drain Current (IDM): | 8 A |
| Surface Mount: | YES |
| No. of Terminals: | 7 |
| Maximum Power Dissipation (Abs): | 44 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G7 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | 1.25 ohm |
| Avalanche Energy Rating (EAS): | 45 mJ |
| Other Names: | 1242-G2R1000MT17J |
| Maximum Feedback Capacitance (Crss): | 5 pF |
| JEDEC-95 Code: | TO-263 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 1700 V |
| Reference Standard: | IEC-60747-8-4 |
