BSZ15DC02KDHXTMA1 by Infineon Technologies

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BSZ15DC02KDHXTMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSZ15DC02KDHXTMA1
Description

N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 5.1 A; Case Connection: DRAIN; No. of Terminals: 8;
Datasheet

Datasheet

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BSZ15DC02KDHXTMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	5.1 A
Maximum Pulsed Drain Current (IDM):	20 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.055 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	11 mJ
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	20 V
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101

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