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CSD18532Q5B
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ManufacturerTexas Instruments
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Manufacturer's Part NumberCSD18532Q5B
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 156 W; Avalanche Energy Rating (EAS): 320 mJ; Package Shape: RECTANGULAR;
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Datasheet
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DetailsCSD18532Q5B Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 23 A |
| Maximum Pulsed Drain Current (IDM): | 400 A |
| Sub-Category: | FET General Purpose Powers |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 156 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0043 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 320 mJ |
| Other Names: | CSD18532Q5B-ND -296-35628-2 296-35628-1 296-35628-2 296-35628-6 -296-35628-2-ND |
| Maximum Feedback Capacitance (Crss): | 17 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Maximum Drain Current (Abs) (ID): | 100 A |
| Peak Reflow Temperature (C): | 260 |
