BSC123N08NS3GXT by Infineon Technologies

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BSC123N08NS3GXT

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSC123N08NS3GXT
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Terminal Form: NO LEAD; Package Shape: RECTANGULAR;
Datasheet

Datasheet

Not In Stock

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BSC123N08NS3GXT Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	70 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	55 A
Maximum Pulsed Drain Current (IDM):	220 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	8
Minimum DS Breakdown Voltage:	80 V
Maximum Power Dissipation (Abs):	66 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0123 ohm

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BSC123N08NS3GXT Technical Details

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