SZNUP2105LT1G by Onsemi

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SZNUP2105LT1G

  • Manufacturer
    Onsemi
  • Manufacturer's Part Number
    SZNUP2105LT1G
  • Description
    TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
  • Datasheet

Not In Stock

Please provide a valid Quantity between 1 and 1000,000,000.
Please provide a valid Email Address.

Popular Products

SZNUP2105LT1G Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Config: COMMON ANODE, 2 ELEMENTS
Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category: Transient Suppressors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W
Technology: AVALANCHE
JESD-30 Code: R-PDSO-G3
Minimum Breakdown Voltage: 26.2 V
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Polarity: BIDIRECTIONAL
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Maximum Breakdown Voltage: 32 V
Maximum Repetitive Peak Reverse Voltage: 24 V
Maximum Clamping Voltage: 44 V
JEDEC-95 Code: TO-236AB
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Diode Element Material: SILICON
Nominal Breakdown Voltage: 29.1 V
Additional Features: LOW CAPACITANCE
Reference Standard: AEC-Q101; IEC-61000-4-2, 4-4, 4-5
Peak Reflow Temperature (C): 260

Category Top Products