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JANTX2N6796U

Manufacturer

Microsemi
Manufacturer's Part Number

JANTX2N6796U
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Additional Features: HIGH RELIABILITY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet

Datasheet

679 In Stock

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JANTX2N6796U Technical Details

TYPE	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8 A
Maximum Pulsed Drain Current (IDM):	32 A
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	15
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-CQCC-N15
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	SOURCE
Maximum Drain-Source On Resistance:	.195 ohm
Avalanche Energy Rating (EAS):	134 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	100 V
Qualification:	Qualified
Additional Features:	HIGH RELIABILITY
Reference Standard:	MIL-19500/557

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