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SIR422DP-T1-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SIR422DP-T1-GE3
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 34.7 W; JESD-30 Code: R-XDSO-C5; Qualification: Not Qualified;
Datasheet

Datasheet

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SIR422DP-T1-GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	20.5 A
Maximum Pulsed Drain Current (IDM):	70 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	5
Maximum Power Dissipation (Abs):	34.7 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-XDSO-C5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	C BEND
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0066 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	45 mJ
Other Names:	SIR422DP-T1-GE3CT SIR422DP-T1-GE3-ND SIR422DP-T1-GE3TR SIR422DPT1GE3 SIR422DP-T1-GE3DKR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	40 A
Peak Reflow Temperature (C):	260

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