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FDS8949_F085

Manufacturer

Fairchild Semiconductor
Manufacturer's Part Number

FDS8949_F085
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Position: DUAL; Terminal Form: GULL WING;
Datasheet

Datasheet

1325 In Stock

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FDS8949_F085 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6 A
Maximum Pulsed Drain Current (IDM):	20 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.029 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	26 mJ
Other Names:	FDS8949_F085TR-ND FDS8949_F085TR FDS8949-F085DKR FDS8949_F085CT FDS8949-F085TR FDS8949_F085 FDS8949-F085CT FDS8949_F085CT-ND FDS8949F085 FDS8949_F085DKR-ND FDS8949_F085DKR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	6 A
Peak Reflow Temperature (C):	260

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