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| QTY | Unit Price | Ext Price |
| 374 | $2.302 | $860.892 |
IPB200N25N3GATMA1
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberIPB200N25N3GATMA1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .02 ohm;
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Datasheet
374 In Stock
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DetailsIPB200N25N3GATMA1 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 64 A |
| Maximum Pulsed Drain Current (IDM): | 256 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 2 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .02 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 320 mJ |
| Other Names: | IPB200N25N3GATMA1TR IPB200N25N3 G IPB200N25N3 GDKR-ND IPB200N25N3 GDKR IPB200N25N3 GTR-ND SP000677896 IPB200N25N3 GCT-ND IPB200N25N3G IPB200N25N3 GCT IPB200N25N3GATMA1CT IPB200N25N3 G-ND IPB200N25N3GATMA1DKR IPB200N25N3 GTR |
| JEDEC-95 Code: | TO-263AB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 250 V |
| Qualification: | Not Qualified |
