IPB200N25N3GATMA1 by Infineon Technologies

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IPB200N25N3GATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IPB200N25N3GATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .02 ohm;
Datasheet

Datasheet

374 In Stock

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IPB200N25N3GATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	64 A
Maximum Pulsed Drain Current (IDM):	256 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.02 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	320 mJ
Other Names:	IPB200N25N3GATMA1TR IPB200N25N3 G IPB200N25N3 GDKR-ND IPB200N25N3 GDKR IPB200N25N3 GTR-ND SP000677896 IPB200N25N3 GCT-ND IPB200N25N3G IPB200N25N3 GCT IPB200N25N3GATMA1CT IPB200N25N3 G-ND IPB200N25N3GATMA1DKR IPB200N25N3 GTR
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	250 V
Qualification:	Not Qualified

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