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DMP6023LE-13

Manufacturer

Diodes Incorporated
Manufacturer's Part Number

DMP6023LE-13
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260; Maximum Drain-Source On Resistance: .028 ohm;
Datasheet

Datasheet

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DMP6023LE-13 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	7 A
Maximum Pulsed Drain Current (IDM):	50 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	4
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.028 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	62.9 mJ
Other Names:	DMP6023LE-13DITR DMP6023LE-13DICT DMP6023LE-13DIDKR
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Additional Features:	HIGH RELIABILITY
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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