IPA80R1K0CEXKSA2 by Infineon Technologies

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IPA80R1K0CEXKSA2

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IPA80R1K0CEXKSA2
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 230 mJ; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
Datasheet

Datasheet

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IPA80R1K0CEXKSA2 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	230 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5.7 A
JEDEC-95 Code:	TO-220AB
Maximum Pulsed Drain Current (IDM):	18 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	800 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.95 ohm

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