Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,190	$0.858	$1,020.842

FQB22P10TM

Manufacturer

Onsemi
Manufacturer's Part Number

FQB22P10TM
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 22 A; No. of Elements: 1;
Datasheet

Datasheet

1190 In Stock

Popular Products

BAV99

Zetex Plc

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

STMicroelectronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N5819HW-7-F

Diodes Incorporated

1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.

Details

LM107H/883

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;

Details

ULN2803A

Sanken Electric

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;

Details

M39029/56-351

Defense Logistics Agency

CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;

Details

M39029/58-360

Conesys

CONNECTOR ACCESSORY; MIL Conformity: YES; Mating Contacts: M39029/57-354; Terminal Type: CRIMP; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT;

Details

2902037

Phoenix Contact

MODULAR TERMINAL BLOCK;

Details

CRCW04020000Z0ED

Vishay Intertechnology

Vishay Intertechnology's CRCW04020000Z0ED is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating b/w -55 to 155 °C, it suits SMT applications in automotive electronics due to AEC-Q200 compliance and 0.063 W power dissipation.

Details

SMBJ18CA

Pulse Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

DS18B20

Maxim Integrated

DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.

Details

1N4148

International Components

RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;

Details

2N7002

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;

Details

2N7002

Sinyork

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

Details

SS14

Leshan Radio

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;

Details

SMBJ18CA

Forward International Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

Details

LM317T

Samsung

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel; Maximum Line Regulation (%/V): .07;

Details

DRV5053VAQLPG

Texas Instruments

Texas Instruments DRV5053VAQLPG is a magnetic field sensor with 2.5-38V supply voltage range, -40 to 125°C operating temperature, and 0-2V output. Ideal for applications requiring Hall effect sensors like automotive, industrial automation, and robotics due to its compact size (1.52" x 4mm) and high output current capability of 2.3A.

Details

LL4148

Excel (Suzhou) Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

FDC5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;

Details

FQB22P10TM Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	22 A
Maximum Pulsed Drain Current (IDM):	88 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.125 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	710 mJ
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	22 A
Peak Reflow Temperature (C):	245

Category Top Products

IRF7401TRPBF

Infineon Technologies

Infineon's IRF7401TRPBF is an N-channel FET with a 20V breakdown voltage and 8.7A max drain current. Ideal for switching applications, it features a built-in diode, 0.022 ohm on-resistance, and can handle up to 35A pulsed drain current in enhancement mode operation.

FDV301N-NB9V008

Fairchild Semiconductor

FDV301N-NB9V008 by Fairchild Semiconductor is a N-CHANNEL FET with 0.5A max drain current and 0.35W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various power management circuits.

2N7002

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;

IRF3205ZPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Pulsed Drain Current (IDM): 440 A; Case Connection: DRAIN;

IRF7493TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Finish: MATTE TIN; No. of Elements: 1;

IRF4905PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSFM-T3; Operating Mode: ENHANCEMENT MODE;

BSP613PH6327XTSA1

Infineon Technologies

BSP613PH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 11.6A and 0.13 ohm Drain-Source On Resistance, suitable for ENHANCEMENT MODE operation in automotive systems (AEC-Q101).

FDD4685TF-SB82135

Fairchild Semiconductor

FDD4685TF-SB82135 by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 100A IDM, and 0.027 ohm RDS(ON). With ENHANCEMENT MODE operation, it has a max temp of 150°C and AEC-Q101 compliance.

NVMFS5C604NLAFT1G

Onsemi

NVMFS5C604NLAFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

IPB180P04P4L02ATMA2

Infineon Technologies

Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;

CSD19537Q3

Texas Instruments

CSD19537Q3 by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 100V DS Breakdown Voltage, 219A Max Pulsed Drain Current, and 0.0166 ohm Max Drain-Source On Resistance. Ideal for high-power switching circuits with an operating temperature range of -55 to 150 °C.

SQJ431EP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ431EP-T1_GE3 is a P-CHANNEL FET with 200V DS Breakdown Voltage, 40A IDM, and 0.221 ohm RDS(ON). Ideal for power applications requiring high drain current and low on-resistance in a small outline package.

BSC22DN20NS3GATMA1

Infineon Technologies

Infineon's BSC22DN20NS3GATMA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 28A IDM and 0.225 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C. This PLASTIC/EPOXY transistor has DUAL terminals and a built-in DIODE, making it suitable for high-power circuit designs.

STW12NK90Z

STMicroelectronics

STW12NK90Z by STMicroelectronics is a N-CHANNEL Power FET with 900V DS Breakdown Voltage and 44A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 230W, this transistor has a 0.88 ohm RDS(on) and can handle up to 11A drain current.

IRFZ44NSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (Abs) (ID): 49 A; Avalanche Energy Rating (EAS): 150 mJ;

FQP3P50

Onsemi

FQP3P50 by Onsemi is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 10.8A and EAS of 250mJ, making it suitable for high-power operations. With an operating temperature up to 150°C, this MOSFET offers reliable performance in various industrial settings.

BSC093N15NS5ATMA1

Infineon Technologies

Infineon BSC093N15NS5ATMA1 is a N-CHANNEL FET with 150V DS breakdown voltage, 0.0093 ohm RDS(on), and 348A IDM. Ideal for switching applications due to its built-in diode, it operates in enhancement mode and has an EAS of 130mJ. The transistor's small outline package makes it suitable for surface mount designs.

BSP89H6327XTSA1

Infineon Technologies

Infineon's BSP89H6327XTSA1 is a N-CHANNEL Power FET with 240V DS Breakdown Voltage. It features 1.4A IDM, 0.35A ID, and 6ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and small outline package style.

SQM120P06-07L-GE3

Vishay Intertechnology

Vishay Intertechnology's SQM120P06-07L-GE3 is a P-channel power FET with 60V DS breakdown voltage, 120A max drain current, and 0.0067 ohm on-resistance. Ideal for high-power applications in enhancement mode operation with 480A pulsed drain current capability.

IRF640

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 122 ns; Transistor Element Material: SILICON;