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SQJ469EP-T1_GE3
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ManufacturerVishay Intertechnology
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Manufacturer's Part NumberSQJ469EP-T1_GE3
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G4; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
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Datasheet
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DetailsSQJ469EP-T1_GE3 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 32 A |
| Maximum Pulsed Drain Current (IDM): | 128 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 4 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .025 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 101 mJ |
| Other Names: | SQJ469EP-T1-GE3TR SQJ469EP-T1_GE3TR SQJ469EP-T1-GE3-ND SQJ469EP-T1-GE3TR-ND SQJ469EP-T1_GE3CT SQJ469EP-T1-GE3CT SQJ469EP-T1-GE3CT-ND SQJ469EP-T1-GE3DKR-ND SQJ469EP-T1_GE3DKR SQJ469EP-T1-GE3 SQJ469EP-T1-GE3DKR |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 80 V |
| Qualification: | Not Qualified |
| Peak Reflow Temperature (C): | 260 |
