IRF3205ZSPBF by International Rectifier

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
265	$0.479	$126.882

IRF3205ZSPBF

Manufacturer

International Rectifier
Manufacturer's Part Number

IRF3205ZSPBF
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet

Datasheet

265 In Stock

Popular Products

LM358N

Taejin Technology

OPERATIONAL AMPLIFIER; Temperature Grade: AUTOMOTIVE; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

EU2B-YS3203C

Idec

ROTARY SWITCH;

Details

1N4148

Compensated Devices

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

Details

1N4148WS

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Hy Electronic

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM78L05ACMX/NOPB

Texas Instruments

LM78L05ACMX/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 0.1A. It operates b/w 0-125°C, has a dropout voltage of 1.6V, and can handle input voltages up to 30V making it ideal for various electronic applications requiring stable power supply.

Details

2N2222A

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SMBJ18CA

Changzhou Starsea Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Digitron Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

M39029/58-360

Glenair

CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;

Details

2N2222A

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148WS

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

USB3320C-EZK-TR

Standard Microsystems

INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;

Details

1N4148

Taitron Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Nexperia

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

Details

1N4148

Taiwan Semiconductor

RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;

Details

BAV99

Infinex

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MMBT3904LT1G

Onsemi

MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.

Details

1N4148WS

Taitron Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

IRF3205ZSPBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	75 A
Maximum Pulsed Drain Current (IDM):	440 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - with Nickel (Ni) barrier
No. of Terminals:	2
Maximum Power Dissipation (Abs):	170 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0065 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	250 mJ
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	55 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Maximum Drain Current (Abs) (ID):	110 A
Peak Reflow Temperature (C):	260

Category Top Products

NVF2955T1G by Onsemi

NVF2955T1G

Onsemi

The Onsemi NVF2955T1G is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 17A and EAS of 225mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and 0.185 ohm RDS(on), it offers efficient power dissipation up to 2.3W at 175°C.

IRLML0100TRPBF-1 by Infineon Technologies

IRLML0100TRPBF-1

Infineon Technologies

Infineon's IRLML0100TRPBF-1 is a N-channel Power FET with 100V DS breakdown voltage and 7A IDM. Ideal for enhancement mode operation, it features a built-in diode, 0.22 ohm RDS(on), and is suitable for surface mount applications in power electronics.

IRF5210STRLPBF by International Rectifier

IRF5210STRLPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Additional Features: HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE; Package Shape: RECTANGULAR;

IRFP460LCPBF by Vishay Intertechnology

IRFP460LCPBF

Vishay Intertechnology

Vishay Intertechnology's IRFP460LCPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 80A IDM and 960mJ EAS ratings. Operating in ENHANCEMENT MODE, it features 0.27 ohm Drain-Source On Resistance and can handle up to 280W power dissipation.

IRFR5410TRPBF by International Rectifier

IRFR5410TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Avalanche Energy Rating (EAS): 194 mJ; Additional Features: HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE;

FQD12N20LTM_F085 by Fairchild Semiconductor

FQD12N20LTM_F085

Fairchild Semiconductor

FQD12N20LTM_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, 36A IDM, and 0.32 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 55W.

ZVN2110GTA by Diodes Incorporated

ZVN2110GTA

Diodes Incorporated

ZVN2110GTA by Diodes Inc. is a N-CHANNEL power FET with 100V DS breakdown voltage, 6A IDM, and 4 ohm RDS(on). It is used for switching applications in small outline packages.

IRF3205PBF by International Rectifier

IRF3205PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Case Connection: DRAIN; No. of Elements: 1;

IRF7410TRPBF by International Rectifier

IRF7410TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;

BSC011N03LSTATMA1 by Infineon Technologies

BSC011N03LSTATMA1

Infineon Technologies

Infineon's BSC011N03LSTATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0014 ohm RDS(on), and 190mJ EAS. Its small outline package and DUAL terminals make it suitable for high-power ENHANCEMENT MODE operations.

IRF740SPBF by International Rectifier

IRF740SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 40 A; Minimum DS Breakdown Voltage: 400 V;

BSP170PH6327XTSA1 by Infineon Technologies

BSP170PH6327XTSA1

Infineon Technologies

Infineon's BSP170PH6327XTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 7.6A IDM, and 0.3 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and 150°C max operating temp.

FDD86102LZ by Onsemi

FDD86102LZ

Onsemi

FDD86102LZ by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 40A Pulsed Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode and operates in ENHANCEMENT MODE. Suitable for surface mount, this transistor has a max power dissipation of 54W and can handle up to 8A Drain Current.

IRFZ44NLPBF by International Rectifier

IRFZ44NLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Terminals: 3;

IRF7493TRPBF by Infineon Technologies

IRF7493TRPBF

Infineon Technologies

Infineon's IRF7493TRPBF is a N-CHANNEL FET with 80V DS Breakdown Voltage and 74A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.015 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this MOSFET has a max power dissipation of 2.5W at 150°C.

G3R450MT17D by Genesic Semiconductor

G3R450MT17D

Genesic Semiconductor

Power Field-Effect Transistors;

IRF7413ZTRPBF by Infineon Technologies

IRF7413ZTRPBF

Infineon Technologies

Infineon's IRF7413ZTRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 100A IDM, 32mJ EAS, and 0.01 ohm RDS(on). With a max temp of 150°C, this MOSFET in GULL WING package is designed for high-power ENHANCEMENT MODE operations.

SQJ402EP-T1_GE3 by Vishay Intertechnology

SQJ402EP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ402EP-T1_GE3 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 32A ID. Ideal for applications requiring high current handling, such as power supplies or motor control systems. Features include 48mJ EAS rating, -55 to 175 °C operating temp range, and 0.011 ohm Drain-Source On Resistance.

IRFP460BPBF by Vishay Intertechnology

IRFP460BPBF

Vishay Intertechnology

Vishay Intertechnology's IRFP460BPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 62A IDM and 0.25 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with an EAS of 281mJ, making it suitable for high-power tasks.

IRF7343TRPBF by Infineon Technologies

IRF7343TRPBF

Infineon Technologies

IRF7343TRPBF by Infineon is a Power FET with N-Channel and P-Channel types. It has 2 separate elements with built-in diode for switching applications. Features include 55V DS breakdown voltage, 38A max pulsed drain current, and 0.05 ohm max drain-source resistance. Ideal for enhancement mode operation in various electronic devices.