FDD4685TF-SB82135 by Fairchild Semiconductor

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FDD4685TF-SB82135

Manufacturer

Fairchild Semiconductor
Manufacturer's Part Number

FDD4685TF-SB82135
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; No. of Terminals: 2; Maximum Turn Off Time (toff): 81 ns;
Datasheet

Datasheet

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FDD4685TF-SB82135 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	43 ns
Maximum Drain Current (ID):	32 A
Maximum Pulsed Drain Current (IDM):	100 A
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	83 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	81 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.027 ohm
Maximum Feedback Capacitance (Crss):	205 pF
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	40 A

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