SIA456DJ-T1-GE3 by Vishay Intertechnology

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SIA456DJ-T1-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SIA456DJ-T1-GE3
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 1.38 ohm;
Datasheet

Datasheet

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SIA456DJ-T1-GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	55 ns
Maximum Drain Current (ID):	2.6 A
Maximum Pulsed Drain Current (IDM):	2 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	6
Maximum Power Dissipation (Abs):	19 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	75 ns
JESD-30 Code:	S-PDSO-N6
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	1.38 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	6 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	2.6 A

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