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SQJ402EP-T1_GE3
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ManufacturerVishay Intertechnology
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Manufacturer's Part NumberSQJ402EP-T1_GE3
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 48 mJ; Package Style (Meter): SMALL OUTLINE;
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Datasheet
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DetailsSQJ402EP-T1_GE3 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 48 mJ |
| Other Names: | SQJ402EP-T1_GE3DKR SQJ402EP-T1_GE3CT SQJ402EP-T1_GE3TR |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 32 A |
| Maximum Pulsed Drain Current (IDM): | 75 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 100 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .011 ohm |
