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SQJ402EP-T1_GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SQJ402EP-T1_GE3
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 48 mJ; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

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SQJ402EP-T1_GE3 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	48 mJ
Other Names:	SQJ402EP-T1_GE3DKR SQJ402EP-T1_GE3CT SQJ402EP-T1_GE3TR
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	32 A
Maximum Pulsed Drain Current (IDM):	75 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	4
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.011 ohm

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