PSMN4R8-100BSE by Nexperia

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PSMN4R8-100BSE

Manufacturer

Nexperia
Manufacturer's Part Number

PSMN4R8-100BSE
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 405 W; Terminal Position: SINGLE; Peak Reflow Temperature (C): 260;
Datasheet

Datasheet

3055 In Stock

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PSMN4R8-100BSE Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	159 ns
Maximum Drain Current (ID):	120 A
Maximum Pulsed Drain Current (IDM):	707 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	405 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	294 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	405 W
Maximum Drain-Source On Resistance:	.0048 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	542 mJ
Maximum Feedback Capacitance (Crss):	643 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Reference Standard:	IEC-60134
Maximum Drain Current (Abs) (ID):	120 A
Peak Reflow Temperature (C):	260

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