RFD16N05LSM9A by Harris Semiconductor

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RFD16N05LSM9A

  • Manufacturer
    Harris Semiconductor
  • Manufacturer's Part Number
    RFD16N05LSM9A
  • Description
    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 16 A; Terminal Position: SINGLE; Package Style (Meter): SMALL OUTLINE;
  • Datasheet

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RFD16N05LSM9A Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 16 A
JEDEC-95 Code: TO-252AA
Maximum Pulsed Drain Current (IDM): 45 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: MEGAFET, LOGIC LEVEL COMPATIBLE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .047 ohm

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