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RFD16N05LSM9A

Manufacturer

Harris Semiconductor
Manufacturer's Part Number

RFD16N05LSM9A
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 16 A; Terminal Position: SINGLE; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

1766 In Stock

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RFD16N05LSM9A Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	16 A
JEDEC-95 Code:	TO-252AA
Maximum Pulsed Drain Current (IDM):	45 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	50 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	MEGAFET, LOGIC LEVEL COMPATIBLE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.047 ohm

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