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FDBL86062-F085
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ManufacturerOnsemi
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Manufacturer's Part NumberFDBL86062-F085
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 429 W; Reference Standard: AEC-Q101; Package Style (Meter): SMALL OUTLINE;
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Datasheet
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DetailsFDBL86062-F085 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 73 ns |
| Maximum Drain Current (ID): | 300 A |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 429 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 59 ns |
| JESD-30 Code: | R-PSSO-F2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .002 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 352 mJ |
| Other Names: | 488-FDBL86062-F085CT FDBL86062_F085-ND 488-FDBL86062-F085TR 488-FDBL86062-F085DKR FDBL86062_F085 FDBL86062-F085-ND 2156-FDBL86062-F085-488 |
| Maximum Feedback Capacitance (Crss): | 29 pF |
| JEDEC-95 Code: | MO-299A |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Reference Standard: | AEC-Q101 |
| Maximum Drain Current (Abs) (ID): | 300 A |
| Peak Reflow Temperature (C): | 260 |
