SQJ409EP-T1_GE3 by Vishay Intertechnology

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SQJ409EP-T1_GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SQJ409EP-T1_GE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Reference Standard: AEC-Q101; Package Body Material: PLASTIC/EPOXY;
Datasheet

Datasheet

Not In Stock

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SQJ409EP-T1_GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	60 A
Maximum Pulsed Drain Current (IDM):	150 A
Surface Mount:	YES
No. of Terminals:	4
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.007 ohm
Avalanche Energy Rating (EAS):	84 mJ
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED

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