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NTBG020N120SC1

Manufacturer

Onsemi
Manufacturer's Part Number

NTBG020N120SC1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 468 W; Operating Mode: ENHANCEMENT MODE; Minimum Operating Temperature: -55 Cel;
Datasheet

Datasheet

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NTBG020N120SC1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	106 ns
Maximum Drain Current (ID):	98 A
Maximum Pulsed Drain Current (IDM):	392 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	7
Maximum Power Dissipation (Abs):	468 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	94 ns
JESD-30 Code:	R-PSSO-G7
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.028 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	264 mJ
Maximum Feedback Capacitance (Crss):	24 pF
JEDEC-95 Code:	TO-263CB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	1200 V
Maximum Drain Current (Abs) (ID):	98 A
Peak Reflow Temperature (C):	245

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