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NTBG020N120SC1
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ManufacturerOnsemi
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Manufacturer's Part NumberNTBG020N120SC1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 468 W; Operating Mode: ENHANCEMENT MODE; Minimum Operating Temperature: -55 Cel;
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Datasheet
470 In Stock
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DetailsNTBG020N120SC1 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON CARBIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 106 ns |
| Maximum Drain Current (ID): | 98 A |
| Maximum Pulsed Drain Current (IDM): | 392 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 7 |
| Maximum Power Dissipation (Abs): | 468 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 94 ns |
| JESD-30 Code: | R-PSSO-G7 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .028 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 264 mJ |
| Other Names: | 488-NTBG020N120SC1CT 488-NTBG020N120SC1DKR 488-NTBG020N120SC1TR |
| Maximum Feedback Capacitance (Crss): | 24 pF |
| JEDEC-95 Code: | TO-263CB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 1200 V |
| Maximum Drain Current (Abs) (ID): | 98 A |
| Peak Reflow Temperature (C): | 245 |