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RFD14N05LSM9A
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ManufacturerHarris Semiconductor
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Manufacturer's Part NumberRFD14N05LSM9A
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Qualification: Not Qualified; Maximum Turn Off Time (toff): 100 ns;
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Datasheet
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DetailsRFD14N05LSM9A Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 60 ns |
Maximum Drain Current (ID): | 14 A |
Surface Mount: | YES |
No. of Terminals: | 2 |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 100 ns |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Power Dissipation Ambient: | 48 W |
Maximum Drain-Source On Resistance: | .1 ohm |
JEDEC-95 Code: | TO-252AA |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 50 V |
Qualification: | Not Qualified |
Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |