BSC028N06NSTATMA1 by Infineon Technologies

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BSC028N06NSTATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSC028N06NSTATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Terminal Finish: TIN; Operating Mode: ENHANCEMENT MODE;
Datasheet

Datasheet

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BSC028N06NSTATMA1 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	100 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	23 A
Maximum Pulsed Drain Current (IDM):	400 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	8
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0028 ohm
Moisture Sensitivity Level (MSL):	1

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