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IRLML6402TR
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ManufacturerInternational Rectifier
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Manufacturer's Part NumberIRLML6402TR
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; JESD-30 Code: R-PDSO-G3; Operating Mode: ENHANCEMENT MODE;
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Datasheet
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DetailsIRLML6402TR Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 3.7 A |
Maximum Pulsed Drain Current (IDM): | 22 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 1.3 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .065 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 11 mJ |
JEDEC-95 Code: | TO-236AB |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 20 V |
Qualification: | Not Qualified |
Additional Features: | HIGH RELIABILITY |
Maximum Drain Current (Abs) (ID): | 3.7 A |