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IRFP250NPBF
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberIRFP250NPBF
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-247AC;
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Datasheet
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DetailsIRFP250NPBF Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 30 A |
| Maximum Pulsed Drain Current (IDM): | 120 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| Terminal Finish: | MATTE TIN OVER NICKEL |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 214 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .075 ohm |
| Avalanche Energy Rating (EAS): | 315 mJ |
| JEDEC-95 Code: | TO-247AC |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 200 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Maximum Drain Current (Abs) (ID): | 30 A |
