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2N7000

Manufacturer

Unisonic Technologies
Manufacturer's Part Number

2N7000
Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
Datasheet

Datasheet

11176 In Stock

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1N4148

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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2N7002

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FDV303N

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2N7000 Technical Details

TYPE	DESCRIPTION
Maximum Power Dissipation (Abs):	.4 W
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
No. of Elements:	1
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (ID):	.115 A
Maximum Drain Current (Abs) (ID):	.115 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO

Category Top Products

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FDS8949_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 20A IDM, and 0.029 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic devices requiring efficient power management in compact designs.

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CSD19536KTT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 806mJ, operating in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has a max ID of 200A and 0.0028 ohm RDS(on), suitable for high-power switching circuits.

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International Rectifier

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Infineon's BSC016N06NSATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 400A and EAS of 380mJ, ensuring efficient operation. With a drain-source on resistance of 0.0016 ohm and operating temperature up to 150°C, it offers high performance in a small outline package.

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IRF7304TRPBF by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.6A ID. It features a built-in diode, 0.09 ohm RDS(on), and operates in enhancement mode. Ideal for power management applications requiring high drain current capabilities in compact designs.

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