IRFH5015TRPBF by International Rectifier

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IRFH5015TRPBF

Manufacturer

International Rectifier
Manufacturer's Part Number

IRFH5015TRPBF
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; No. of Elements: 1; JESD-609 Code: e3;
Datasheet

Datasheet

57 In Stock

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IRFH5015TRPBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	10 A
Maximum Pulsed Drain Current (IDM):	220 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	5
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.031 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	230 mJ
Other Names:	IRFH5015TRPBFTR IRFH5015TRPBFCT IRFH5015TRPBFDKR SP001575670 2156-IRFH5015TRPBFTR IRFH5015TRPBF-ND
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	150 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	56 A
Peak Reflow Temperature (C):	260

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