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BSL302SNH6327XTSA1
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberBSL302SNH6327XTSA1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Moisture Sensitivity Level (MSL): 1;
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Datasheet
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DetailsBSL302SNH6327XTSA1 Technical Details
TYPE | DESCRIPTION |
---|---|
Avalanche Energy Rating (EAS): | 30 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 7.1 A |
Maximum Pulsed Drain Current (IDM): | 28 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 6 |
Minimum DS Breakdown Voltage: | 30 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G6 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Maximum Drain-Source On Resistance: | .025 ohm |
Moisture Sensitivity Level (MSL): | 1 |