BSL302SNH6327XTSA1 by Infineon Technologies

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535	$0.175	$93.518

BSL302SNH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSL302SNH6327XTSA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Moisture Sensitivity Level (MSL): 1;
Datasheet

Datasheet

535 In Stock

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BSL302SNH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	30 mJ
Other Names:	BSL302SNH6327XTSA1DKR BSL302SNH6327XTSA1TR SP001100662 IFEINFBSL302SNH6327XTSA1 BSL302SNH6327XTSA1CT BSL302SNH6327XTSA1-ND 2156-BSL302SNH6327XTSA1
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	7.1 A
Maximum Pulsed Drain Current (IDM):	28 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	6
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance:	.025 ohm
Moisture Sensitivity Level (MSL):	1

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