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2N7002

Manufacturer

Formosa Microsemi
Manufacturer's Part Number

2N7002
Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;
Datasheet

Datasheet

10046 In Stock

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2N7002 Technical Details

TYPE	DESCRIPTION
Maximum Power Dissipation (Abs):	.225 W
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (ID):	.115 A
Maximum Drain Current (Abs) (ID):	.115 A
Sub-Category:	FET General Purpose Power
Peak Reflow Temperature (C):	260
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES

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