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2N7002
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ManufacturerFormosa Microsemi
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Manufacturer's Part Number2N7002
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DescriptionN-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;
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Datasheet
10046 In Stock
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Details2N7002 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | .225 W |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | .115 A |
| Maximum Drain Current (Abs) (ID): | .115 A |
| Sub-Category: | FET General Purpose Power |
| Peak Reflow Temperature (C): | 260 |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
