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BVSS123LT1G

Manufacturer

Onsemi
Manufacturer's Part Number

BVSS123LT1G
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
Datasheet

Datasheet

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BVSS123LT1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.17 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.225 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	6 ohm
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	.17 A
Peak Reflow Temperature (C):	260

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