SI9926CDY-T1-GE3 by Vishay Intertechnology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI9926CDY-T1-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SI9926CDY-T1-GE3
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Peak Reflow Temperature (C): 260; Terminal Form: GULL WING;
Datasheet

Datasheet

Not In Stock

Popular Products

M24308/2-1F

Adi Electronics

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;

Details

BAV99

Kec

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

RC0402FR-071KL

Yageo

The Yageo RC0402FR-071KL is a fixed resistor with a resistance of 1000 ohm and a tolerance of 1%. It is suitable for surface mount applications and has a max operating temperature of 155 °C.

Details

SS14

Hitano Enterprise

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CMX

Texas Instruments

LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.

Details

1N4148WT

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Semiconductors

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;

Details

CRCW080510K0FKEA

Vishay Intertechnology

Vishay Intertechnology's CRCW080510K0FKEA is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 reference standard compliance and -55 to 155 °C operating temperature range.

Details

FDLL4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

2N2222A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;

Details

LL4148

Changzhou Starsea Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Weitron Technology

RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);

Details

LL4148

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148WT

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LD1117S33TR

STMicroelectronics

LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.

Details

SMBJ18CA

Hy Electronic

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

Taitron Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

IRLML6402TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;

Details

LL4148

Onsemi

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SS14

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SI9926CDY-T1-GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	8
Maximum Power Dissipation (Abs):	3.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.018 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	8 A
Peak Reflow Temperature (C):	260

Category Top Products

MMBF170-7

Diodes Incorporated

Diodes Inc. MMBF170-7 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 0.5A max drain current, 5ohm RDS(on), and 5pF Crss. The small outline package with gull wing terminals makes it suitable for surface mount designs in enhancement mode operation up to 150°C.

FDN5630

Onsemi

FDN5630 by Onsemi is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 1.7A.

BSS123-7-F

Diodes Incorporated

BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.

BF862

NXP Semiconductors

NXP Semiconductors' BF862 is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it has a max power dissipation of 0.225W and max drain current of 0.04A. The transistor's package is RECTANGULAR with GULL WING terminals, suitable for surface mount assembly at temperatures up to 150°C.

DMG1013T-7

Diodes Incorporated

DMG1013T-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 0.46A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.27W.

LND150N3-GP002

Microchip Technology

LND150N3-GP002 by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Operating in depletion mode, it has a max ID of 0.03A and RDS(on) of 1000Ω. With a temp range of -55 to 150°C, this transistor features a built-in diode and low Crss for efficient performance.

BSS123

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 100 V;

BSS138_NL

Fairchild Semiconductor

BSS138_NL by Fairchild Semiconductor is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 6 ohm RDS. It is used for switching applications in enhancement mode with a max operating temperature of 150°C.

NDS331N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;

NTS2101PT1G

Onsemi

NTS2101PT1G by Onsemi is a P-CHANNEL FET with 8V DS breakdown voltage, 3.7A max drain current, and 0.1 ohm max on resistance. Ideal for switching applications in small outline packages, operating at up to 150°C with matte tin terminal finish.

IRLML6244TRPBF

Infineon Technologies

Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Pulsed Drain Current (IDM): 32 A; Peak Reflow Temperature (C): 260; Qualification: Not Qualified;

BSS84

Yangzhou Yangjie Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 60 V;

SI2305CDS-T1-GE3

Vishay Intertechnology

SI2305CDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 8V DS breakdown voltage and 5.8A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.7W. With a package style of small outline and dual terminal position, it offers efficient performance in various electronic circuits.

MMBF170-7-F

Diodes Incorporated

Diodes Inc.'s MMBF170-7-F is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.3W power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in small outline packages.

BS170P

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: RECTANGULAR; No. of Elements: 1; No. of Terminals: 3;

ZXMP10A13FTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;

FDC5612_NL

Fairchild Semiconductor

FDC5612_NL by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS breakdown voltage and 4.3A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.6W. This small outline transistor with GULL WING terminals is designed for surface mount applications at temperatures up to 150°C.

SI9926CDY-T1-GE3

Not In Stock

Popular Products

M24308/2-1F

BAV99

RC0402FR-071KL

SS14

LM555CMX

1N4148WT

1N4148

CRCW080510K0FKEA

FDLL4148

2N2222A

LL4148

1N4148

LL4148

1N4148WT

LD1117S33TR

SMBJ18CA

1N4148WS

IRLML6402TRPBF

LL4148

SS14

SI9926CDY-T1-GE3 Technical Details

Category Top Products

MMBF170-7

FDN5630

BSS123-7-F

BF862

DMG1013T-7

LND150N3-GP002

BSS123

BSS138_NL

NDS331N

NTS2101PT1G

IRLML6244TRPBF

BSS84

SI2305CDS-T1-GE3

MMBF170-7-F

BS170P

ZXMP10A13FTA

FDC5612_NL

BSS84

BS170

ZXMN10A07FTA